[J-6] Emerging Memory Devices, and DRAM

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[J-6-01] Folded bit-line technology for bank-edge in 10nm 5th-generation DRAMs

〇Taehoon Park¹, Chanho Park¹, Hyodong Ban¹, Dongkyu Jang¹ (1. Samsung Electronics (Korea))

DOI:

https://doi.org/10.7567/SSDM.2025.J-6-01

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