2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[J-6]Emerging Memory Devices, and DRAM

Thu. Sep 18, 2025 10:45 AM - 12:15 PM JST
Thu. Sep 18, 2025 1:45 AM - 3:15 AM UTC
Room J (411+412, 4th Floor)
Session Chair: Atsushi Himeno (Panasonic Holdings Corp.), Akiyoshi Seko (Micron Memory Japan, K.K.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[J-6-01]Folded bit-line technology for bank-edge in 10nm 5th-generation DRAMs

〇Taehoon Park1, Chanho Park1, Hyodong Ban1, Dongkyu Jang1 (1. Samsung Electronics (Korea))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[J-6-02]A novel solution to alleviate bit-line break and roughness in 10nm-class high-k metal gate DRAM

〇Jieun Lee1, Taehoon Kim1, Donghee Choi1, Suji Kim1, Dongseok Kim1, Dongkyu Jang1, Taehoon Park1, Hyodong Ban1 (1. Samsung Electronics (Korea))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[J-6-03]A Capacitorless DRAM based on Complementary Field-Effect Transistor (CFET)

〇Sandeep Semwal1, Pin Su1 (1. National Yang Ming Chiao Tung University (Taiwan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[J-6-04]Analysis of Defect-Induced Performance Degradation in Gate-All-Around Nanosheet-Based 3D DRAM

〇Bushra Fatima1, Sanjeev Kumar Manhas1, Imtiyaz Ahmad Khan1, Harsh Raju1, Arvind Kumar2, Mahendra Pakala3 (1. Indian Institute of Technology Roorkee (India), 2. Epitaxy Business Unit, Applied Materials Inc., Santa Clara, USA (United States of America), 3. Advanced Product and Technology Development (APTD), Applied Materials Inc., Santa Clara, USA (United States of America))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[J-6-05 (Late News)]Temperature Dependence of Non-polar Switching Characteristics of carbon-doped HfOx thin films formed by mist CVD for CeRAM

〇Masamichi Azuma1,2, Mamoru Ikeda1, Tsubasa Miyamoto1, Hiroyuki Nishinaka1 (1. Kyoto Institute of Technology (Japan), 2. Symetrix Corp. (United States of America))
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[J-6-06 (Late News)]Sc-Doped Amorphous GaOx Memristors for High Temperature Neuromorphic Application

〇Yuki Komizo1, Zhuo Diao1, Tetsuya Tohei1, Akira Sakai1 (1. Graduate School of Eng. Sci., The Univ. of Osaka (Japan))
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