[J-6] Emerging Memory Devices, and DRAM

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[J-6-04] Analysis of Defect-Induced Performance Degradation in Gate-All-Around Nanosheet-Based 3D DRAM

〇Bushra Fatima¹, Sanjeev Kumar Manhas¹, Imtiyaz Ahmad Khan¹, Harsh Raju¹, Arvind Kumar², Mahendra Pakala³ (1. Indian Institute of Technology Roorkee (India), 2. Epitaxy Business Unit, Applied Materials Inc., Santa Clara, USA (United States of America), 3. Advanced Product and Technology Development (APTD), Applied Materials Inc., Santa Clara, USA (United States of America))