[K-3] Device I

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[K-3-02] Source/Drain Contact Formation Using H₂S Annealing for TMDC-channel CMOS: Ni_xNb_1-xS₂ Contacts for MoS₂ nFET and NbS₂ contacts for WSe₂ pFET

〇Koki Hori^1,2, Wen Hsin Chang², Toshifumi Irisawa², Naoya Okada², Atsushi Ogura^1,3 (1. Meiji Univ. (Japan), 2. AIST (Japan), 3. MREL (Japan))