[K-3] Device I | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[K-3]Device I

Wed. Sep 17, 2025 9:00 AM - 10:15 AM JST
Wed. Sep 17, 2025 12:00 AM - 1:15 AM UTC

Room K (413, 4th Floor)

Session Chair: Mahito Yamamoto (Kansai Univ.), Toshifumi Irisawa (AIST)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[K-3-01 (Invited)]Interfaces in Semiconductor Devices Based on Low-dimensional Materials: The Case of Flexible Carbon Nanotube TFTs and Analog ICs

〇Yutaka Ohno¹ (1. Nagoya Univ. (Japan))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[K-3-02]Source/Drain Contact Formation Using H₂S Annealing for TMDC-channel CMOS: Ni_xNb_1-xS₂ Contacts for MoS₂ nFET and NbS₂ contacts for WSe₂ pFET

〇Koki Hori^1,2, Wen Hsin Chang², Toshifumi Irisawa², Naoya Okada², Atsushi Ogura^1,3 (1. Meiji Univ. (Japan), 2. AIST (Japan), 3. MREL (Japan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[K-3-03]Nearly Ideal Subthreshold Swing in Monolayer WSe₂ Top-Gate pFETs with Scaled EOT of 0.8 nm

〇Yu-wei Hsu^1,2, Chen-Hsun Hsu², Yu-Tung Lin¹, Nien-En Chiang¹, Ying-Zhan Chiu¹, Shao-Heng Chen¹, Sin-Yue Lee², Ting-Hua Wei², Zi-Quan Su², Hung-Li Chiang², I-Chih Ni¹, Chih-I Wu¹, Tsung-En Lee² (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[K-3-04]Coplanar Structure Design of Floating-gate Antiferroelectric Transistor with Multiple Operation Modes for Reconfigurable Neuromorphic Computing System

〇Yufei Shi¹, Jiali Huo¹, Yu-Chieh Chien¹, Kah-Wee Ang¹ (1. National Univ. of Singapore (Singapore))

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