Presentation Information
[K-4-02]Effects of Top, Top+Edge, and C-type Source / Drain Contacts on Device Characteristics of P-Type WSe2 Gate-All-Around Nanosheet FETs
〇Szu-Huan Hsu1, Kuan-Lin Lee1, Yueh-Ju Chan1, Yiming Li1 (1. Nat'l Yang Ming Chiao Tung Univ. (Taiwan))