2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[K-4]Characterization II

Wed. Sep 17, 2025 10:45 AM - 12:00 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:00 AM UTC
Room K (413, 4th Floor)
Session Chair: Masafumi Jo (RIKEN), Yusuke Hoshi (Tokyo City Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[K-4-01]Wafer-scale 2D Material Integrated Device Performance Assessment from Room-temperature Photoluminescence

〇Thomas Nuytten1, Albert Minj1, Stefanie Sergeant1, Quentin Smets1, Luca Panarella1, Steven Brems1, Pawan Kumar1, Souvik Ghosh1, Tom Schram1, Sreetama Banerjee1, Anastasiia Kruv1, Dennis van Dorp1, Benjamin Groven1, Pierre Morin1 (1. imec (Belgium))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[K-4-02]Effects of Top, Top+Edge, and C-type Source / Drain Contacts on Device Characteristics of P-Type WSe2 Gate-All-Around Nanosheet FETs

〇Szu-Huan Hsu1, Kuan-Lin Lee1, Yueh-Ju Chan1, Yiming Li1 (1. Nat'l Yang Ming Chiao Tung Univ. (Taiwan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[K-4-03]Quantitative ToF-SIMS analysis of Transferred Nb Doped MoS2:
Direct Dopant Quantification and Micrometer Scale Impurity Distribution

〇Itsuki Tanaka1, Tomonori Nishimura1, Kaito Kanahashi1, Satoru Morito2, Keiji Ueno2, Kosuke Nagashio1 (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[K-4-04]Hot Carrier Dynamics in InAs Nanowire Photodetectors

〇Xiaofan Lin1, Ralf Mouthaan2, Faris Abualnaja1, Peter J Christopher3, Greg Chu1, Ibtisam Hammad Ab basi1, Chennupati Jagadish4,5, Hark Hoe Tan4,5, Hannah J Joyce1, Jack A Alexander-Webber1 (1. Department of Eng., Univ. of Cambridge (UK), 2. Univ of Adelaide,Centre of Light for Life (Austria), 3. Department of Eng.,Univ. of Nottingham (UK), 4. Department of Electronic Materials Eng., Res. School of Physics,The Australian National Univ. (Austria), 5. Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Res. School of Physics, The Australian National Univ. (Australia))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[K-4-05]Approaching the Intrinsic Homogeneous Broadening in Suspended Transition-Metal Dichalcogenide Monolayers

〇Giacomo Mariani1, Keigo Matsuyama1, Yoji Kunihashi1, Taro Wakamura1, Satoshi Sasaki1, Makoto Kohda2,3,4, Junsaku Nitta1,2, Haruki Sanada1 (1. NTT Basic Research Laboratories (Japan), 2. Department of Materials Science, Graduate School of Engineering, Tohoku University (Japan), 3. Center for Science and Innovation in Spintronics, Tohoku University (Japan), 4. Quantum Materials and Applications Research Center (QUARC), National Institutes for Quantum Science and Technology (Japan))
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