Presentation Information

[M-1-02]Expansion Rate Change of Single Shockley-Type Stacking Faults in 4H-SiC by High Temperature Annealing After Fluorine or Oxygen Ion Implantation

〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1. Toshiba Corp. (Japan))