2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[M-1]SiC Mateials and Processes

Tue. Sep 16, 2025 1:30 PM - 3:00 PM JST
Tue. Sep 16, 2025 4:30 AM - 6:00 AM UTC
Room M (414+415, 4th Floor)
Session Chair: Tomoya Ono (Kobe Univ.), Kohei Adachi (Mitsubishi Electric)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[M-1-01 (Invited)]Consideration on 4H-SiC surface nitridation reactionsfor designing more efficient SiO2/SiC interface defect passivation processes

〇Koji Kita1 (1. The Univ. of Tokyo (Japan))
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[M-1-02]Expansion Rate Change of Single Shockley-Type Stacking Faults in 4H-SiC by High Temperature Annealing After Fluorine or Oxygen Ion Implantation

〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1. Toshiba Corp. (Japan))
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[M-1-03]Significant Lowering of Interface State Density at Deposited SiO2/SiC Interface by Two-Step O2/N2 Annealing

〇Junhao Meng1, Xianyong Wu1,2, Wei Shan1, Changhong Zhong1, Jingquan Liu1, Xiuyan Li1 (1. Shanghai Jiao Tong Univ. (China), 2. GTA Semiconductor Co., Ltd. (China))
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[M-1-04]Study on 4H-SiC (0001) MOS Interface Characteristics with Direct NO Oxynitridation Considering SiC Surface Reaction Kinetics

〇Yutaro Uchida1, Atsushi Tamura1, Koji Kita1 (1. The Univ. of Tokyo (Japan))
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[M-1-05]Unveiling Trapped Photoinduced Charges at the 4H-SiC/SiO2 Interface via Graphene Transport

〇Tetsuhiro Owa1, Jin Miura1, Fumiyuki Inamura1, Takashi Ikuta1, Kenzo Maehashi1, Kenji Ikushima1 (1. Tokyo Univ. of A&T (Japan))
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