[M-1] SiC Materials and Processes

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[M-1-03] Significant Lowering of Interface State Density at Deposited SiO₂/SiC Interface by Two-Step O₂/N₂ Annealing

〇Junhao Meng¹, Xianyong Wu^1,2, Wei Shan¹, Changhong Zhong¹, Jingquan Liu¹, Xiuyan Li¹ (1. Shanghai Jiao Tong Univ. (China), 2. GTA Semiconductor Co., Ltd. (China))