[M-1] SiC Materials and Processes

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[M-1-04] Study on 4H-SiC (0001) MOS Interface Characteristics with Direct NO Oxynitridation Considering SiC Surface Reaction Kinetics

〇Yutaro Uchida¹, Atsushi Tamura¹, Koji Kita¹ (1. The Univ. of Tokyo (Japan))