[M-2] THz and High-speed Devices

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[M-2-01 (Invited)] THz Plasmonic Detectors Based on Grating-Gate InGaAs-Channel High-Electron-Mobilitiy Transistors

〇Akira Satou¹, Taiichi Otsuji^1,2,3 (1. Res. Inst. of Electrical Communication, Tohoku Univ. (Japan), 2. International Res. Inst. of Disaster Sci., Tohoku Univ. (Japan), 3. Center of Excellence ENSEMBLE3 Ltd (Poland))