Session Details
[M-2]THz and High-speed Devices
Tue. Sep 16, 2025 3:30 PM - 5:00 PM JST
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC
Room M (414+415, 4th Floor)
Session Chair: Taketomo Sato (Hokkaido Univ.), Takuya Tsutsumi (Osaka Metropolitan Univ.)
[M-2-01 (Invited)]THz Plasmonic Detectors Based on Grating-Gate InGaAs-Channel High-Electron-Mobilitiy Transistors
〇Akira Satou1, Taiichi Otsuji1,2,3 (1. Res. Inst. of Electrical Communication, Tohoku Univ. (Japan), 2. International Res. Inst. of Disaster Sci., Tohoku Univ. (Japan), 3. Center of Excellence ENSEMBLE3 Ltd (Poland))
[M-2-02]Heterodyne Detection at 300-GHz Band by a UTC-PD-Integrated HEMTPhotonic Double-Mixer with a Grating-Gate Structure
〇Rauru Takahashi1, Shota Horiuchi1, Tsung-Tse Lin1, Chao Tang1, Taichi Otsuji2,1, Akira Sato1 (1. Tohoku Univ. (Japan), 2. Center of Excellence ENSEMBLE3 Ltd. (Poland))
[M-2-03]Digital Alloying of InGaAs for Resonant Tunneling Diodes
〇Michele Cito1, Ryuto Machida1, Issei Watanabe1 (1. NICT (Japan))
[M-2-04]High-Speed and Low DC-Power Operations of Double δ-Doped GaInSb HEMTs
〇Wataru Nakajima1, Ryosuke Kouno1, Tomoki Jinnai1, Tatsuhisa Oba1, Ryuto Machida2, Issei Watanabe2,1, Yoshimi Yamashita2, Shinsuke Hara2, Akifumi Kasamatsu2, Akira Endoh1, Hiroki I Fujishiro1 (1. Tokyo Univ. of science (Japan), 2. National Inst. of Information and Communications Technology (Japan))
[M-2-05]Recent Developments in Type-II InP/Ga(In)AsSb DHBTs: Device Physics, Performance and New Perspectives
〇Colombo R. Bolognesi1, Filippo Ciabattini1, Sara Hamzeloui1, Akshay Arabhavi1, Mojtaba Ebrahimi1, Andrea Cercaci1, Giorgio Bonomo1, Olivier Ostinelli1 (1. ETH-Zürich (Switzerland))