[M-2] THz and High-speed Devices

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[M-2-04] High-Speed and Low DC-Power Operations of Double δ-Doped GaInSb HEMTs

〇Wataru Nakajima¹, Ryosuke Kouno¹, Tomoki Jinnai¹, Tatsuhisa Oba¹, Ryuto Machida², Issei Watanabe^2,1, Yoshimi Yamashita², Shinsuke Hara², Akifumi Kasamatsu², Akira Endoh¹, Hiroki I Fujishiro¹ (1. Tokyo Univ. of science (Japan), 2. National Inst. of Information and Communications Technology (Japan))