[M-3] Ga2O3 Power Devices

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[M-3-02] 2.1-kV β-Ga₂O₃ Heterojunction Barrier Schottky Diodes with Cu anode

〇Xiaohui - Wang^1,2, Mujun Li¹, Chun-Zhang Chen², Haozhe Yu¹, Qing Wang¹, Hongyu Yu^1,3 (1. Southern Univ. of Sci. and Tech. (China), 2. Pengcheng Lab. (China), 3. Shenzhen Polytechnic Univ. (China))