2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[M-3]Ga2O3 Power Devices

Wed. Sep 17, 2025 9:00 AM - 10:15 AM JST
Wed. Sep 17, 2025 12:00 AM - 1:15 AM UTC
Room M (414+415, 4th Floor)
Session Chair: Kohei Sasaki (Novel Crystal Technology, Inc.), Shinya Takashima (Fuji Electric)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[M-3-01 (Invited)]High performance gallium oxide devices: status and challenges

〇Uttam Singisetti1 (1. Univ. at Buffalo (United States of America))
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[M-3-02]2.1-kV β-Ga2O3 Heterojunction Barrier Schottky Diodes with Cu anode

〇Xiaohui - Wang1,2, Mujun Li1, Chun-Zhang Chen2, Haozhe Yu1, Qing Wang1, Hongyu Yu1,3 (1. Southern Univ. of Sci. and Tech. (China), 2. Pengcheng Lab. (China), 3. Shenzhen Polytechnic Univ. (China))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[M-3-03]Improvement of β-Ga2O3 Schottky Barrier Diodes with AgOx Anode: Achieving 1.5-kV Breakdown Voltage and Over 1013 On-/Off-state Ratio

〇Xiaole Jia1, Zheyuan Hu2, Yibo Wang3, Cizhe Fang3, Haodong Hu3, Bochang Li3, Yan Liu1, Yue Hao1, Genquan Han1,3 (1. Xidian University (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (China), 3. Hangzhou Institute of Technology, Xidian University (China))
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[M-3-04]The Improved Breakdown Characteristics of a 2-nm SiO2 Interlayer Vertical β-Ga2O3 MIS Diode

〇Xiangxin Zhang1, Yibo Wang1,2, Cizhe Fang2, Haodong Hu2, Zheng-Dong Luo2, Yan Liu1, Bochang Li2, Yue Hao1, Genquan Han1,2 (1. Xidian University, Xi’an 710071 (China), 2. Hangzhou Institute of Technology, Xidian University, Hangzhou 311200 (China))
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