[M-3] Ga2O3 Power Devices

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[M-3-03] Improvement of β-Ga₂O₃ Schottky Barrier Diodes with AgO_x Anode: Achieving 1.5-kV Breakdown Voltage and Over 10¹³ On-/Off-state Ratio

〇Xiaole Jia¹, Zheyuan Hu², Yibo Wang³, Cizhe Fang³, Haodong Hu³, Bochang Li³, Yan Liu¹, Yue Hao¹, Genquan Han^1,3 (1. Xidian University (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (China), 3. Hangzhou Institute of Technology, Xidian University (China))