[M-3] Ga2O3 Power Devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[M-3-04] The Improved Breakdown Characteristics of a 2-nm SiO₂ Interlayer Vertical β-Ga₂O₃ MIS Diode

〇Xiangxin Zhang¹, Yibo Wang^1,2, Cizhe Fang², Haodong Hu², Zheng-Dong Luo², Yan Liu¹, Bochang Li², Yue Hao¹, Genquan Han^1,2 (1. Xidian University, Xi’an 710071 (China), 2. Hangzhou Institute of Technology, Xidian University, Hangzhou 311200 (China))