[M-4] GaN, Ga2O3 Processes

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[M-4-01] Impact of Implanted Ion Species on Excess Donors Introduced in n-type GaN Epitaxial Layers

〇Hiroko Iguchi¹, Masahiro Horita², Keita Kataoka¹, Tetsuo Narita¹, Tetsu Kachi², Jun Suda² (1. Toyota Central R&D Labs., Inc. (Japan), 2. Nagoya Univ. (Japan))