2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[M-4]GaN, Ga2O3 Processes

Wed. Sep 17, 2025 10:45 AM - 12:00 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:00 AM UTC
Room M (414+415, 4th Floor)
Session Chair: Shinya Takashima (Fuji Electric), Kohei Sasaki (Novel Crystal Technology, Inc.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[M-4-01]Impact of Implanted Ion Species on Excess Donors Introduced in n-type GaN Epitaxial Layers

〇Hiroko Iguchi1, Masahiro Horita2, Keita Kataoka1, Tetsuo Narita1, Tetsu Kachi2, Jun Suda2 (1. Toyota Central R&D Labs., Inc. (Japan), 2. Nagoya Univ. (Japan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[M-4-02]GaN and Ga2O3 Diodes Study by Applying Ni and O as p-type Dopants

〇Naohiro Shimizu1, Arun Kumar Dhasiyan1, Osamu Oda1, Nobuyuki Ikarashi1, Masaru Hori1 (1. Nagoya Univ. (Japan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[M-4-03]High-Temperature Annealing to Improve the Heterointerface in MOCVD-Grown β-Ga2O3 MOSFETs on Sapphire Substrates

〇Chunxiao Yu1, Bochang Li2, Yibo Wang2, Chenyu Liu1, Huaixin Wang2, Haodong Hu1, Xiaole Jia1, Yiyang Wu3, Jun Zheng3, Yan Liu1, Yue Hao1, Genquan Han2 (1. Wide Bandgap Semiconductor Technology Disciplines State Key Lab., Xidian Univ. (China), 2. The Inst. of Hangzhou Technology, Xidian Univ. (China), 3. The Inst. of Semiconductors, Chinese Academy of Sciences (China))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[M-4-04]Comparative Study of Sn δ-Doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors on R-Plane and M-Plane Sapphire

〇Jia-Zhe Wu1, Han-Wei Chen1, Nei-En Chiu1, Yu-Jie Ge1, William Cheng-Yu Ma1, Han-Yin Liu1 (1. National Sun Yat-sen Univ. (Taiwan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[M-4-05 (Late News)]Photocapacitance Investigation of Deep-Level Trap States in Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall Metalorganic Vapor Phase Epitaxy

〇Jun Jason Morihara1, Tsukasa Kakio1, Junya Yoshinaga2,3, Takafumi Kamimura4, Yoshinao Kumagai2, Masataka Higashiwaki1,4 (1. Osaka Metropolitan Univ. (Japan), 2. Tokyo Univ. of Agric. and Tech. (Japan), 3. TAIYO NIPPON SANSO CORP. (Japan), 4. NICT (Japan))
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