[M-4] GaN, Ga2O3 Processes

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[M-4-02] GaN and Ga₂O₃ Diodes Study by Applying Ni and O as p-type Dopants

〇Naohiro Shimizu¹, Arun Kumar Dhasiyan¹, Osamu Oda¹, Nobuyuki Ikarashi¹, Masaru Hori¹ (1. Nagoya Univ. (Japan))