[M-4] GaN, Ga2O3 Processes

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[M-4-03] High-Temperature Annealing to Improve the Heterointerface in MOCVD-Grown β-Ga₂O₃ MOSFETs on Sapphire Substrates

〇Chunxiao Yu¹, Bochang Li², Yibo Wang², Chenyu Liu¹, Huaixin Wang², Haodong Hu¹, Xiaole Jia¹, Yiyang Wu³, Jun Zheng³, Yan Liu¹, Yue Hao¹, Genquan Han² (1. Wide Bandgap Semiconductor Technology Disciplines State Key Lab., Xidian Univ. (China), 2. The Inst. of Hangzhou Technology, Xidian Univ. (China), 3. The Inst. of Semiconductors, Chinese Academy of Sciences (China))