[M-5] Emerging Materials and Devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[M-5-04] α-Ga₂O₃-Based Schottky Barrier Diode for Microwave Rectenna Applications

〇Takeru Wakamatsu¹, Shizuo Fujita¹, Hikaru Ikeda¹, Kentaro Kaneko^1,2, Yasuo Ohno³, Tomomi Hiraoka³, Katsuhisa Tanaka¹ (1. Kyoto Univ. (Japan), 2. Ritsumeikan Univ. (Japan), 3. Laser System Inc. (Japan))