[M-5] Emerging Materials and Devices | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[M-5]Emerging Materials and Devices

Thu. Sep 18, 2025 9:00 AM - 10:15 AM JST
Thu. Sep 18, 2025 12:00 AM - 1:15 AM UTC

Room M (414+415, 4th Floor)

Session Chair: Joel T. Asubar (Univ. of Fukui), Taketomo Sato (Hokkaido Univ.)

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[M-5-01 (Invited)]Recent development of GeO2, SBD device development

〇Kentaro Kaneko¹ (1. Ritsumeikan Univ. / PATENTIX (Japan))

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[M-5-02]First Demonstration of Multi-finger 2DHG Diamond MOSFETs with Source Via Structure

〇Kosuke Ota¹, Yukihiro Chou¹, Kento Narita¹, Yutaro Hashimoto¹, Yuki Takano¹, Atsushi Hiraiwa¹, Momoko Deura¹, Kenji Ueda¹, Hiroshi Kawarada¹ (1. Waseda University (Japan))

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[M-5-03]Defect-Enhanced Sub-Bandgap Excitation and Sinking-Electrode Optimization in Polycrystalline Diamond Photoconductive Semiconductor Switches

〇Yuxin Mao¹, Min Xie¹, Hanpeng Zhang¹, Zheng Fan¹, Xiaoli Lu¹, Xiaohua Ma¹ (1. Xidian Univ. (China))

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[M-5-04]α-Ga₂O₃-Based Schottky Barrier Diode for Microwave Rectenna Applications

〇Takeru Wakamatsu¹, Shizuo Fujita¹, Hikaru Ikeda¹, Kentaro Kaneko^1,2, Yasuo Ohno³, Tomomi Hiraoka³, Katsuhisa Tanaka¹ (1. Kyoto Univ. (Japan), 2. Ritsumeikan Univ. (Japan), 3. Laser System Inc. (Japan))