[M-6] III-V High-frequency and Power Devices

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[M-6-02] Quasi-modulation doping technique to obtain high electron mobilityfor AlGaN/GaN FET

〇Kazuki Kodama¹, Chee-How Lu¹, You-Chen Weng¹, Yuan Lin¹, Yu-Hao Lin¹, Daisuke Ueda¹, Yi Edward Chang¹ (1. NYCU (Taiwan))