2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[M-6]III-V High-frequency and Power Devices

Thu. Sep 18, 2025 10:45 AM - 12:00 PM JST
Thu. Sep 18, 2025 1:45 AM - 3:00 AM UTC
Room M (414+415, 4th Floor)
Session Chair: Takuya Tsutsumi (Osaka Metropolitan Univ.), Yue-ming Hsin (National Central Univ.)
10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[M-6-01 (Invited)]Application/Reliability-Driven Device Design of GaN Power Switches

〇Zhikai Tang1 (1. Texas Instruments Inc. (United States of America))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[M-6-02]Quasi-modulation doping technique to obtain high electron mobilityfor AlGaN/GaN FET

〇Kazuki Kodama1, Chee-How Lu1, You-Chen Weng1, Yuan Lin1, Yu-Hao Lin1, Daisuke Ueda1, Yi Edward Chang1 (1. NYCU (Taiwan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[M-6-03]GaN-based n-p-n HBTs with Mg-doped GaInN MQWs as p-type base region

〇Ryosei Inoue1, Akira Mase1, Tomoki Kojima1, Takashi Egawa1, Makoto Miyoshi1 (1. Nagoya Inst. of Tech. (Japan))
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[M-6-04]Proposal for introduction of composition-graded extrinsic base layers into fine emitter InP HBTs

〇Yasuyuki Miyamoto1,2, Yuta Shiratori2 (1. Science Tokyo (Japan), 2. NTT (Japan))
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