[M-6] III-V High-frequency and Power Devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[M-6-03] GaN-based n-p-n HBTs with Mg-doped GaInN MQWs as p-type base region

〇Ryosei Inoue¹, Akira Mase¹, Tomoki Kojima¹, Takashi Egawa¹, Makoto Miyoshi¹ (1. Nagoya Inst. of Tech. (Japan))