[M-7] Technologies for GaN HEMTs

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[M-7-02] Modeling and analysis of fully-recessed Ohmic contacts to AlGaN/GaN heterostructures

〇Kazuya Uryu^1,2, Junewoo Choi², Yuchen Deng², Toshi-kazu Suzuki² (1. Advantest Corp. (Japan), 2. Japan Advanced Inst. of Sci. and Tech. (Japan))