[M-7] Technologies for GaN HEMTs | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation04: Power / High‐speed Devices and Materials

[M-7]Technologies for GaN HEMTs

Thu. Sep 18, 2025 1:30 PM - 2:45 PM JST
Thu. Sep 18, 2025 4:30 AM - 5:45 AM UTC

Room M (414+415, 4th Floor)

Session Chair: Joel T. Asubar (Univ. of Fukui), Taketomo Sato (Hokkaido Univ.)

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[M-7-01 (Invited)]Overcoming Dynamic Instabilities in GaN Power Devices

〇Jin Wei¹, Junjie Yang¹, Yanlin Wu¹, Jiawei Cui¹, Muqin Nuo¹, Yunhong Lao¹ (1. Peking Univ. (China))

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[M-7-02]Modeling and analysis of fully-recessed Ohmic contacts to AlGaN/GaN heterostructures

〇Kazuya Uryu^1,2, Junewoo Choi², Yuchen Deng², Toshi-kazu Suzuki² (1. Advantest Corp. (Japan), 2. Japan Advanced Inst. of Sci. and Tech. (Japan))

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[M-7-03]Revealing Characteristics under Gate Scaling to Achieve High RF Performance with Small-Signal Analysis in InAlGaN/GaN HEMTs

〇Yi-Lun Huang¹, Kun-Yang Jhang², Min-Chun Chung², Ren-Hong Zhang², Chao-Hsin Wu^1,2,3 (1. Graduate School of Advanced Tech., National Taiwan Univ. (Taiwan), 2. Graduate Inst. of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 3. Graduate Inst. of Electronics Engineering, National Taiwan Univ. (Taiwan))

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[M-7-04]Study of Interface Trap in Tri-Gate AlGaN/GaN MISHEMT Using ALD ZrO₂ as Gate Dielectric

〇Rahul Rai Rai^1,2, Khanh Quoc Nguyen¹, Hung Duy Tran¹, Viet Quoc Ho¹, Baquer Mazhari², Edward Yi Chang¹ (1. National Yang-Ming Chiao Tung University, (Taiwan), 2. Indian Institute of Technology, Kanpur, (India))