[M-7] Technologies for GaN HEMTs

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[M-7-03] Revealing Characteristics under Gate Scaling to Achieve High RF Performance with Small-Signal Analysis in InAlGaN/GaN HEMTs

〇Yi-Lun Huang¹, Kun-Yang Jhang², Min-Chun Chung², Ren-Hong Zhang², Chao-Hsin Wu^1,2,3 (1. Graduate School of Advanced Tech., National Taiwan Univ. (Taiwan), 2. Graduate Inst. of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 3. Graduate Inst. of Electronics Engineering, National Taiwan Univ. (Taiwan))