[M-7] Technologies for GaN HEMTs

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[M-7-04] Study of Interface Trap in Tri-Gate AlGaN/GaN MISHEMT Using ALD ZrO₂ as Gate Dielectric

〇Rahul Rai^1,2, Khanh Quoc Nguyen¹, Hung Duy Tran¹, Viet Quoc Ho¹, Baquer Mazhari², Edward Yi Chang¹ (1. National Yang-Ming Chiao Tung University, (Taiwan), 2. Indian Institute of Technology, Kanpur, (India))