[M-8] Si Materials and Devices

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[M-8-05] 3D TCAD study on the behavior of current filaments at the boundary between cell and edge termination in IGBTs

〇Takeshi Suwa¹ (1. Toshiba Electronic Devices & Storage Corporation (Japan))