Session Details

[M-8]Si Materials and Devices

Thu. Sep 18, 2025 3:15 PM - 4:30 PM JST
Thu. Sep 18, 2025 6:15 AM - 7:30 AM UTC
Room M (414+415, 4th Floor)
Session Chair: Tsuyoshi Kachi (Toshiba Device & storage), Yue-ming Hsin (National Central Univ.)

[M-8-01]Quantitative analysis of Sb donors in Si by PL spectroscopy

〇Yoshiji Miyamura1, Ryosuke Sakemi1, Daigo Hayashi1, Shin-ichi Nishizawa1, Michio Tajima2 (1. Kyushu Univ. (Japan), 2. NPERC-J (Japan))

[M-8-02]Study on Dislocation Propagation in Trench Structures during Silicon IGBTs Process-Oxidation

〇Bozhou Cai1, Jiuyang Yuan1, Yoshiji Miyamura1, Wataru Saito1, Shin-ichi Nishizawa1 (1. Kyushu University (Japan))

[M-8-03]Influence of Pitch Shrinkage on Qrr in Trench Field Plate Power MOSFETs

〇Takuma Hara1, Hiroaki Kato1, Takuya Yasutake1, Kazuyuki Sato1, Hirofumi Kawai1, Shigeru Nakajima1, Tatsuya Ohguro1, Yusuke Kawaguchi1 (1. Toshiba Electronic Devices & Storage Corp (Japan))

[M-8-04]Operating Principle of Field Limiting Ring Edge Termination

〇Kiyoshi Takeuchi1, Munetoshi Fukui1, Takuya Saraya1, Kazuo Itou1, Toshihiko Takakura1, Shinichi Suzuki1, Hiroyuki Takase1, Toshiro Hiramoto1 (1. The Univ. or Tokyo (Japan))

[M-8-05]3D TCAD study on the behavior of current filaments at the boundary between cell and edge termination in IGBTs

〇Takeshi Suwa1 (1. Toshiba Electronic Devices & Storage Corporation (Japan))