[N-1] Oxide Semiconductor Devices 1

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[N-1-02] Superlattice ZrO₂-Al₂O₃ Gate Stack of BEOL-Compatible In₂O₃ FETs with High On/Off Ratio >10⁹ and Synaptic a = -0.63 for 2T0C

〇Zhao-Feng Lou¹, Sie Beng Ting², Yii-Tay Chang¹, Che-Chi Cheng¹, Shu-Tong Chang³, Ming-Han Liao⁴, Ling-Yen Yeh⁵, Shou-Zen Chang⁵, I-Chun Cheng², Min-Hung Lee ^1,6,7 (1. Program for Semiconductor Devices, Materials, and Hetero-integration, Graduate School of Advanced Technology, National Taiwan Univ. (Taiwan), 2. Graduate Institute of Photonics and Optoelectronics, National Taiwan Univ. (Taiwan), 3. Department of Electrical Engineering, National Chung Hsing Univ. (Taiwan), 4. Department of Mechanical Engineering, National Taiwan Univ. (Taiwan), 5. Powerchip Semiconductor Manufacturing Corp. (Taiwan), 6. Graduate Institute of Electronics Engineering, National Taiwan Univ. (Taiwan), 7. Institute of Applied Mechanics, Nation Taiwan Univ. (Taiwan))