[N-1] Oxide Semiconductor Devices 1

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[N-1-03] Electrical Characteristics Improvement and V_th Modification in Ultrathin InO_x FETs with AlO_x-Interlayer/HfO_x Gate Stack

〇Chia-Tsong Chen¹, Kasidit Toprasertpong², Toshifumi Irisawa¹, Wen Hsin Chang¹, Shinji Migita¹, Yukinori Morita¹, Hiroyuki Ota¹, Tatsuro Maeda¹ (1. AIST (Japan), 2. The Univ. of Tokyo (Japan))