[N-1] Oxide Semiconductor Devices 1

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[N-1-04] Reduction Parasitic Resistance in Polycrystalline Ga-Doped In₂O₃ Channel Field-Effect Transistors by Using a Buffer Layer of In₂O₃-Based Conductive Oxides

〇Hikaru Hoshikawa¹, Takanori Takahashi¹, Yukiharu Uraoka¹ (1. NAIST (Japan))