[N-2] Oxide Semiconductor Devices 2

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[N-2-01] Top-Gate Oxide Semiconductor Transistor with High Mobility and Steep Subthreshold Slope Enabled by Oxygen-Rich Gate Insulator Process

〇Kai Jiang¹, Ziheng Wang¹, Zhiyu Lin¹, Mengwei Si¹ (1. Shanghai Jiao Tong University (China))