[N-2] Oxide Semiconductor Devices 2 | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[N-2]Oxide Semiconductor Devices 2

Tue. Sep 16, 2025 3:30 PM - 5:00 PM JST
Tue. Sep 16, 2025 6:30 AM - 8:00 AM UTC

Room N (416+417, 4th Floor)

Session Chair: Wenchang Yeh (Shimane Univ.), Tsung-En Lee (National Yang Ming Chiao Tung Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[N-2-01]Top-Gate Oxide Semiconductor Transistor with High Mobility and Steep Subthreshold Slope Enabled by Oxygen-Rich Gate Insulator Process

〇Kai Jiang¹, Ziheng Wang¹, Zhiyu Lin¹, Mengwei Si¹ (1. Shanghai Jiao Tong University (China))

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[N-2-02]Improved Positive Bias Stability in In₂O₃Top-Gate Transistors via Optimized Oxidant Precursors for High-κ Dielectrics

〇Ching-Shuan Huang^1,3, Che-Chi Shih², Tung-Cheng Shih^1,3, Wu-Wei Tsai², Yu-Hsuan Yu³, Meng-Chung Chen⁴, Bin-Shiuan Ku⁴, Wen-Chih Lo⁴, Chien-Wei Chen³, Wei-Yen Woon², Chao-Hsin Chien¹ (1. Institute of Electronics, National Yang Ming Chiao Tung University (Taiwan), 2. Pathfinding, R&D, Taiwan Semiconductor Manufacturing Company (TSMC) (Taiwan), 3. Taiwan Instrument Research Institute, National Applied Research Laboratories (Taiwan), 4. Thales System Co., Ltd (Taiwan))

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[N-2-03]Ideal Subthreshold Swing in ultra-thin IGZTO TFTs via Gate Stacking

〇Kai Chen^1,2, Ran Cheng¹, Rui Zhang¹, Junkang Li¹, Yunlong Li^1,2 (1. Zhejiang Univ. (China), 2. Zhejiang ICsprout Semiconductor Corp. (China))

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[N-2-04]A Physics-Based Compact Model for Drain Current in Amorphous InGaZnO Thin-Film Transistors with Scalability of Channel Thickness

〇Haotong Zhu^1,3, Yuanzhao Hu^2,3, Haolin Li^1,3, Zheng Zhou^1,3, Xiaoyan Liu^1,3, Jinfeng Kang^1,3 (1. School of Integrated Circuits, Peking Univ. (China), 2. School of Software and Microelectronics, Peking Univ. (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[N-2-05 (Late News)]Effects of Ozone Concentration on ALD Copper Oxide TFTs Exhibiting High-Temperature Stability Compatible with NAND Process

〇Ji-Hwan Choi¹, JaeKyeong Jeong¹ (1. Hanyang University (Korea))

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[N-2-06 (Late News)]Core-Shell Soft Magnetic Composites with High Resistivity and Saturation Magnetization for Inductor Applications

〇Cheng-Hsien Yeh¹, Guan-Wei Fan¹, Chuan-Feng Shih¹ (1. National Cheng Kung Univ. (Taiwan))

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