[N-2] Oxide Semiconductor Devices 2

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[N-2-02] Improved Positive Bias Stability in In₂O₃ Top-Gate Transistors via Optimized Oxidant Precursors for High-κ Dielectrics

〇Ching-Shuan Huang^1,3, Che-Chi Shih², Tung-Cheng Shih^1,3, Wu-Wei Tsai², Yu-Hsuan Yu³, Meng-Chung Chen⁴, Bin-Shiuan Ku⁴, Wen-Chih Lo⁴, Chien-Wei Chen³, Wei-Yen Woon², Chao-Hsin Chien¹ (1. Institute of Electronics, National Yang Ming Chiao Tung University (Taiwan), 2. Pathfinding, R&D, Taiwan Semiconductor Manufacturing Company (TSMC) (Taiwan), 3. Taiwan Instrument Research Institute, National Applied Research Laboratories (Taiwan), 4. Thales System Co., Ltd (Taiwan))