[N-2] Oxide Semiconductor Devices 2

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[N-2-04] A Physics-Based Compact Model for Drain Current in Amorphous InGaZnO Thin-Film Transistors with Scalability of Channel Thickness

〇Haotong Zhu^1,3, Yuanzhao Hu^2,3, Haolin Li^1,3, Zheng Zhou^1,3, Xiaoyan Liu^1,3, Jinfeng Kang^1,3 (1. School of Integrated Circuits, Peking Univ. (China), 2. School of Software and Microelectronics, Peking Univ. (China), 3. Beijing Advanced Innovation Center for Integrated Circuits (China))