[N-4] Oxide Semiconductor Devices 4

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[N-4-02] BEOL-Compatible Top-Gate Self-Aligned IGZO TFTs Realized by Etching-Time-Optimized ITO/IGZO Stacked Channel Architecture

Shaocong Lv¹, Xiaoyu Lin¹, Xianglong Li¹, Zebin Zhang¹, Wenbo Cui¹, 〇Jiawei Zhang¹ (1. School of Integrated Circuits, Shandong University (China))