[N-4] Oxide Semiconductor Devices 4 | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[N-4]Oxide Semiconductor Devices 4

Wed. Sep 17, 2025 10:45 AM - 12:00 PM JST
Wed. Sep 17, 2025 1:45 AM - 3:00 AM UTC

Room N (416+417, 4th Floor)

Session Chair: Chih-Yu Chang (TSMC), Chuan Liu (Sun Yat-sen Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[N-4-01]Balancing Work Function and Contact Resistance in IGZO TFTs via Pt-Al Alloying

〇Krittin Auewattanapun^1,3, Juan Paolo S. Bermundo¹, Senku Tanaka², Hidenori Kawanishi¹, Ratchatee Techapiesancharoenkij³, Yukiharu Uraoka¹ (1. Nara Inst. of Science and Technology (NAIST) (Japan), 2. Kindai Univ. (Japan), 3. Kasetsart Univ. (Thailand))

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[N-4-02]BEOL-Compatible Top-Gate Self-Aligned IGZO TFTs Realized by Etching-Time-Optimized ITO/IGZO Stacked Channel Architecture

Shaocong Lv¹, Xiaoyu Lin¹, Xianglong Li¹, Zebin Zhang¹, Wenbo Cui¹, 〇Jiawei Zhang¹ (1. School of Integrated Circuits, Shandong University (China))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[N-4-03]IGZO Schottky Barrier Thin Film Transistors with Positive V_th and Steep SS by Modulating Schottky Barrier Height

〇Tianhao Liao^1,2,3, Nannan You^2,3, Jiayi Wang^2,3, Yang Xu^2,3, Ling Li², Shengkai Wang^2,3 (1. School of Advanced Interdisciplinary Sci., Univ. of Chinese Academy of Sci. (China), 2. State Key Lab. of Fabrication Tech. for Integrated Circuits, Chinese Academy of Sci. (China), 3. High-Frequency High-Voltage Device and Integrated Circuits R&D center, Inst. of Microelectronics, Chinese Academy of Sci. (China))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[N-4-04]Employment of Flash Annealing to Enhance Electron Mobility of Atomic Layer Deposited InZnO_x Channel Thin-Film Transistors

〇Li Chi Peng¹, Yuma Ueno², Kenji Inoue², Katsuhiro Mitsuda², Shinichi Kato², Tsung-Te Chou³, Edward Yi Chang¹, Chun-Hsiung Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 3. Taiwan Instrument Research Inst. (Taiwan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[N-4-05]Room-temperature UV irradiation to improve stability of as-fabricated In-B-O thin-film transistors

Shinri Yamadera¹, 〇Shinya Aikawa¹ (1. Kogakuin Univ. (Japan))

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