[N-4] Oxide Semiconductor Devices 4

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[N-4-03] IGZO Schottky Barrier Thin Film Transistors with Positive V_th and Steep SS by Modulating Schottky Barrier Height

〇Tianhao Liao^1,2,3, Nannan You^2,3, Jiayi Wang^2,3, Yang Xu^2,3, Ling Li², Shengkai Wang^2,3 (1. School of Advanced Interdisciplinary Sci., Univ. of Chinese Academy of Sci. (China), 2. State Key Lab. of Fabrication Tech. for Integrated Circuits, Chinese Academy of Sci. (China), 3. High-Frequency High-Voltage Device and Integrated Circuits R&D center, Inst. of Microelectronics, Chinese Academy of Sci. (China))