[N-4] Oxide Semiconductor Devices 4

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[N-4-04] Employment of Flash Annealing to Enhance Electron Mobility of Atomic Layer Deposited InZnO_x Channel Thin-Film Transistors

〇Li Chi Peng¹, Yuma Ueno², Kenji Inoue², Katsuhiro Mitsuda², Shinichi Kato², Tsung-Te Chou³, Edward Yi Chang¹, Chun-Hsiung Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 3. Taiwan Instrument Research Inst. (Taiwan))