[N-5] Ferroelectric Memories and Gate Stack

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[N-5-01] A Strategy to Improve the Low Voltage High Polarization Using Re-wakeup method on Thin WN_x ICL Based Hf_0.33Zr_0.66O₂ Ferroelectric Memory

Soumyadip Patra¹, Asim Senapati¹, Yii-Tay Chang², Abhijit Aich¹, Le Nguyen Minh Long¹, Yi-Pin Chen^3,4, Shih-Yin Huang^3,5, Min-Hung Lee², 〇Siddheswar Maikap^1,4 (1. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Graduate School of Advance Technology, National Taiwan Univ. (Taiwan), 3. School of Traditional Chinese Medicine, College of Medicine, Chang Gung Univ. (Taiwan), 4. Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital (Taiwan), 5. Chang Gung Univ. , College of Medicine (Taiwan))