2025 International Conference on Solid State Devices and Materials
Advanced Search

Session Details

Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[N-5]Ferroelectric Memories and Gate Stack

Thu. Sep 18, 2025 9:00 AM - 10:00 AM JST
Thu. Sep 18, 2025 12:00 AM - 1:00 AM UTC
Room N (416+417, 4th Floor)
Session Chair: Toshiya Murakami (KIOXIA), Hiroyuki Nishinaka (Kyoto Inst. of Technology)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[N-5-01]A Strategy to Improve the Low Voltage High Polarization Using Re-wakeup method on Thin WNx ICL Based Hf0.33Zr0.66O2 Ferroelectric Memory

Soumyadip Patra1, Asim Senapati1, Yii-Tay Chang2, Abhijit Aich1, Le Nguyen Minh Long1, Yi-Pin Chen3,4, Shih-Yin Huang3,5, Min-Hung Lee2, 〇Siddheswar Maikap1,4 (1. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Graduate School of Advance Technology, National Taiwan Univ. (Taiwan), 3. School of Traditional Chinese Medicine, College of Medicine, Chang Gung Univ. (Taiwan), 4. Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital (Taiwan), 5. Chang Gung Univ. , College of Medicine (Taiwan))
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[N-5-02]Solid Phase Epitaxy-Driven Enhancement of Ferroelectric Phase Fraction in Hf1-xZrxO2 Thin Films

〇Kuan-Ming Chen1, Ming-Lun Tsai2, Chia-Wei Hsu1, Chia-Yin Hsiung3, Wei-Lin Yeh4, Yuan-Chieh Tseng1 (1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University (Taiwan), 2. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University (Taiwan), 3. Graduate Program of Nanotechnology, Department of Materials Science and Engineering, National Yang Ming Chiao Tung University (Taiwan), 4. Degree Program of Semiconductor Material and Process Equipment, National Yang Ming Chiao Tung University (Taiwan))
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[N-5-03]LaB6/LaBxNy Gate Stack Formation Utilizing LaB6 Target for Floating-Gate Type Nonvolatile Memory

〇Fanyi Kong1, Shun-ichiro Ohmi1 (1. Inst. of Science Tokyo (Japan))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[N-5-04]Investigation of the Capacitance-Voltage characteristics of Strongly Correlated Electron Films in Semiconductor Heterojunction

〇Kaito Fujitani1, Koji Iwasaki1, Shuhei Hashimoto1, Ryosuke Takagi1, Yasushi Hotta1 (1. University of Hyogo (Japan))
Back to Category List