[N-5] Ferroelectric Memories and Gate Stack

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[N-5-03] LaB₆/LaB_xN_y Gate Stack Formation Utilizing LaB₆ Target for Floating-Gate Type Nonvolatile Memory

〇Fanyi Kong¹, Shun-ichiro Ohmi¹ (1. Inst. of Science Tokyo (Japan))