[N-6] Group-IV, III-V based Thin-film Growth, and Device Application

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[N-6-04] Optimized high-speed CW Laser Annealing for High and Dopant Activation and Mobility in Sb-Doped Ge Films on Quartz

〇Yuta Goto^1,2, Ryo Matsumura², Naoki Fukata^1,2 (1. Univ. of Tsukuba (Japan), 2. NIMS (Japan))