[N-6] Group-IV, III-V based Thin-film Growth, and Device Application | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[N-6]Group-IV, III-V based Thin-film Growth, and Device Application

Thu. Sep 18, 2025 10:15 AM - 12:15 PM JST
Thu. Sep 18, 2025 1:15 AM - 3:15 AM UTC

Room N (416+417, 4th Floor)

Session Chair: Kaoru Toko (Univ. of Tsukuba), Ryo Matsumura (NIMS)

10:15 AM - 10:45 AM JST(1:15 AM - 1:45 AM UTC)

[N-6-01 (Invited)]Carrier mobility enhancement of extremely-thin body Ge-On-Insulator (GOI) MOSFETs

〇Shinichi Takagi^1,2, Xueyang Han¹, Chia-Tsong Chen¹, Kei Sumita¹, Mitsuru Takenaka¹, Kasidit Toprasertpong¹ (1. The Univ. of Tokyo (Japan), 2. Teikyo Univ. (Japan))

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[N-6-02]Low-Operation Voltage Nano-Filter Layer Ni-Induced Crystallization Poly-Si Complementary Thin-Film Transistors with Low-Thermal Budget

〇Po-Yi Kuo¹ (1. National Chin Yi Univ. of Technology (Taiwan))

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[N-6-03]Origin for Anomalous Reverse Short-Channel Effect in Poly-Si TFTs

〇Geng-Yuan Xie¹, Cheng-Kuei Lee¹, Guo-Wei Huang², Pei-Wen Li¹, Ruey-Dar Chang³, Horng-Chih Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. Taiwan Semiconductor Research Inst. (Taiwan), 3. Chang-Gung Univ. (Taiwan))

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[N-6-04]Optimized high-speed CW Laser Annealing for High and Dopant Activation and Mobility in Sb-Doped Ge Films on Quartz

〇Yuta Goto^1,2, Ryo Matsumura², Naoki Fukata^1,2 (1. Univ. of Tsukuba (Japan), 2. NIMS (Japan))

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[N-6-05]Effect of the Al-Catalyst-Layer on the Growth of Spherulite-Like GeS Thin Films and their Birefringent Properties

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[N-6-06]Impact of the precursor conditions on the solid-phase crystallizationof amorphous InGaAs thin films on glass substrates

〇Yutaka Kiyono^1,2, Koki Nozawa^1,2, Seo Jisol¹, Takashi Suemasu^1,2, Kaoru Toko^1,2 (1. The Univ. of Tsukuba (Japan), 2. Inst. of Applied Physics (Japan))

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[N-6-07]Demonstrating the Superiority of Atomic Layer Etching in 150-nm Gate AlGaN/GaN MOSHEMTs for Ka-Band RF Applications

〇Hsuan-Yao Huang¹, Cheng-Xian Liu¹, Yu Chen¹, Kuan-Pang Chang¹, Tsung-Ying Yang¹, You-Chen Weng², Jui-Sheng Wu², Cheng-Jun Huang¹, Fitriyadi Fitriyadi¹, You-Ting Lin¹, Chung-Han Chiu¹, Edward Yi Chang^1,2 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University (Taiwan), 2. Industry Academia Innovation School, National Yang Ming Chiao Tung University (Taiwan))

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