[N-6] Group-IV, III-V based Thin-film Growth, and Device Application

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[N-6-05] Effect of the Al-Catalyst-Layer on the Growth of Spherulite-Like GeS Thin Films and their Birefringent Properties

〇Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))